Панкратов Евгений Леонидович

Место работы

Институт экономики и предпринимательства

Кафедра математических и естественнонаучных дисциплин

доцент

Ученая степень
Доктор физико-математических наук
Ученое звание
нет
Общий стаж работы 14 лет, 6 мес.

Общие сведения

Преподавание

Научная Работа


Образование, учёные степени и учёные звания

Высшее образование
Бакалавр. Специальность: радиофизика. Квалификация: бакалавр радиофизики.

Высшее образование
Магистр. Специальность: радиофизика. Квалификация: магистр радиофизики.

Дополнительное образование, повышение квалификации, стажировки

01.03.2018 - 25.04.2018
Повышение квалификации: Информационные технологии, ННГУ, 72 час., документ № удостоверение № 522406997290, рег. № 33-2532 от 25.04.2018

15.01.2018 - 15.01.2018
Повышение квалификации: Оказание первой помощи, ННГУ, 8 час., документ № сертификат рег. № 213 от 15.01.2018

10.04.2017 - 10.06.2017
Переподготовка: Информационные, статистические и аналитические методы в экономике и предпринимательстве, ННГУ, документ № 522405003434, рег. номер 33-332 от 15.06.2017

26.04.2017 - 26.05.2017
Повышение квалификации: Электронная информационно-образовательная среда вуза", ННГУ, 72 час., документ № 522404998227, рег. номер 33-2087 от 26.05.2017

25.10.2016 - 27.12.2016
Повышение квалификации: Дистанционные образовательные технологии, ННГУ, 72 час., документ № 522403229554, рег. номер 33-1877 от 27.12.2016

03.02.2016 - 15.03.2016
Повышение квалификации: Преподаватель национального исследовательского университета, ННГУ, 32 час., документ № 522403231058, рег. номер 33-164 от 15.03.2016

05.10.2011 - 06.12.2011
Повышение квалификации: Научно-инновационная деятельность в профессиональном образовании, Нижегородский государственный архитектурно-строительный университет, 72 час., документ № рег. номер 8170 от 06.12.2011

Список преподаваемых дисциплин

Институт экономики и предпринимательства
Математика
Математика. Специальности Гостиничное дело + туризм + управление персоналом.
Математика. Специальности гостиничное дело + туризм.
Математика. Специальности торговое дело + управление персоналом.
Теория вероятностей
Физика

Публикации

2019

Публикации в научных журналах

Pankratov E.L. On increasing the homogeneity of the properties of epitaxial layers grown from the gas phase, taking into account natural convection and changes in the rate of chemical interaction between materials // International Journal of Advances in Applied Sciences. № 3. V. 8. 2019. P. 0-0.

Pankratov E.L. On optimization of manufacturing of bipolar heterotransistors framework circuit of a high-voltage element or to increase their integration rate: on influence mismatch-induced stress. // Universal journal of applied mathematics. № 3. V. 7. 2019. P. 17-40.

Pankratov E.L. On approach to increase integration rate of elements of an four-cascade amplifier circuit // South asian journal of engineering and technology. № 1. V. 8. 2019. P. 27-34.

Pankratov E.L. Variation of distribution of concentration of implanted impurity with account mismatch-induced stresses under influence of variation of substrate temperature // International journal of thin films science and technology. № 1. V. 8. 2019. P. 9-29.

Панкратов Е.Л. О способе увеличения степени интеграции элементов в схеме приемного компаратора // Журнал радиоэлектроники. № 1. 2019. С. 1-30.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework a MOS-filter, to increase their density // Advanced Science, Engineering and Medicine. № 3. V. 11. 2019. P. 204-211.

Pankratov E.L. On optimization of manufacturing of a triple cascaded current-reuse amplifier based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // Advanced Science, Engineering and Medicine. № 3. V. 11. 2019. P. 212-228.

Pankratov E.L. On optimization of manufacturing of an operational amplifier with common-mode feedback based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // Advanced Science, Engineering and Medicine. № 3. V. 11. 2019. P. 229–246.

Pankratov E.L. On optimization of manufacturing of a two-quadrant frequency divider based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // Advanced Science, Engineering and Medicine. № 4. V. 11. 2019. P. 284–300.

Pankratov E.L. On approach to increase integration rate of elements of a folded-cascode amplifier with current buffer Miller compensation // Advanced Science, Engineering and Medicine. № 4. V. 11. 2019. P. 301–315.

Pankratov E.L. On optimization of manufacturing of elements of an phase-tunable divider circuit to increase their integration rate // Advanced Science, Engineering and Medicine. № 4. V. 11. 2019. P. 316–330.

Pankratov E.L. On approach to optimize manufacturing of field-effect heterotransistors framework HERIC-inverter to increase their integration rate. On influence mismatch-induced stress // South asian journal of engineering and technology. № 1. V. 8. 2019. P. 35–52.

Pankratov E.L. On approach to increase integration rate of elements of an four-cascade amplifier circuit // South asian journal of engineering and technology. № 1. V. 8. 2019. P. 53–61.

Pankratov E.L. Nonlinear model to estimate speed of growth of films from gas phase with variation of parameters // Materials Research Express. № 5. V. 6. 2019. P. 056420-1--056420-12.

Панкратов Е.Л. О способе оптимизации технологического процесса формирования полевых транзисторов в составе схемы логический компаратор с зарядовой связью с целью увеличения степени их интеграции. Влияние механических напряжений. // Журнал радиоэлектроники. № 3. 2019. С. 1-35.

Pankratov E.L. Optimization of manufacturing of operational amplifier manufactured by using field-effect heterotransistor to decrease their dimensions // Universal Journal of Materials Science. № 2. V. 7. 2019. P. 14-24.

Pankratov E.L. On approach to increase integration rate of elements of an operational amplifier circuit // Manufacturing Science and Technology. № 1. V. 6. 2019. P. 1-22.

Pankratov E.L. Model for prognosis of economic growth: accounting of influence of the environment // Global Economy Journal. № 1. V. 19. 2019. P. 1950007-1--1950007-2.

Pankratov E.L. On the effect of substrate heating on the rate of growth of epitaxial layers. // Journal of materials science and engineering with advanced technology.. № 2. V. 19. 2019. P. 79-97.

Pankratov E.L. On approach to increase integration rate of elements of a bootstrapped switch circuit // International journal of innovative research in electronics and communications. № 2. V. 6. 2019. P. 26-42.

Pankratov E.L. On analytical approach to prognosis of manufacturing of voltage divider biasing common emitter amplifier with account mismatch-induced stress – on increasing of density of elements. // Asian Journal of Mathematical Sciences. № 1. V. 3. 2019. P. 36-59.

Pankratov E.L. On the choice of compressor pressure in the process of pneumatic transport to increase energy saving. // Asian Journal of Mathematical Sciences. № 1. V. 3. 2019. P. 60-67.

Pankratov E.L. On increasing of homogeneity of grown from the gas phase with account natural convection and chemical interaction between materials. // Emerging Materials Research. № 3. V. 8. 2019. P. 1-11.

Pankratov E.L. On optimization of inventory management of an industrial enterprise. On analytical approach for prognosis of processes. // Advances in modelling and analysis. № 1. V. 56. 2019. P. 26-29.

Панкратов Е.Л. О способе увеличения степени интеграции элементов в схеме двухкаскадного усилителя с компенсацией Миллера. // Журнал радиоэлектроники. № 8. 2019. С. 1-32.

Pankratov E.L. On development of analytical approach for analysis of energy transfer of traveling wave tube // Mathematical modelling of engineering problems. № 3. V. 6. 2019. P. 455-459.

Pankratov E.L. An approach to analyze non-linear dynamics of mass transport during manufacturing of a hybrid comparator circuit: on increasing of integration rate of elements of this circuit. // Asian journal of mathematical sciences. № 3. V. 3. 2019. P. 1-21.

Pankratov E.L. On approach to increase integration rate of elements of a circuit driver with 2-tap de-emphasis and impendence matching // Asian journal of mathematical sciences. № 3. V. 3. 2019. P. 22-40.

Pankratov E.L. On decreasing of dimensions of field-effect heterotransistors in logical CMOP voltage differencing inverting buffered amplifier manufactured // Asian journal of mathematical sciences. № 3. V. 3. 2019. P. 59-70.

Pankratov E.L. On prognosis of changing of the rate of diffusion of radiation defects, generated during ion implantation, with increasing of depth of their penetration // Asian journal of mathematical sciences. № 3. V. 3. 2019. P. 71-78.

Pankratov E.L. On correlation between diffusion rate of radiation defects and depth of their penetration during ion implantation // Journal of Materials Science and Engineering with Advanced Technology. № 1. V. 20. 2019. P. 1-14.

Pankratov E.L. Optimization of manufacturing of logical CMOP voltage differencing inverting buffered amplifier manufactured by using field-effect heterotransistor to decrease their dimensions // Journal of Materials Science and Engineering with Advanced Technology. № 20. V. 1. 2019. P. 15-38.

2018

Публикации в научных журналах

Pankratov E.L. On correction of model of stabilization of distribution of concentration of radiation defects in a multilayer structure with account experiment data // Journal of Semiconductors. № 5. V. 39. 2018. P. 053001-053010.

Pankratov E.L. On possibility to optimize technological process to increase density of field-effect heterotransistors framework a generation circui // Advanced Science, Engineering and Medicine. № 6. V. 10. 2018. P. 596–606.

Pankratov E.L. Optimization of manufacturing of a ring oscillator based on heterostructures. Influence of mismatch induced stress and porosity of materials // Advanced science, engineering and medicine. № 1. V. 10. 2018. P. 43–59.

Pankratov E.L. On optimization of manufacturing of a clocked comparator latch to increase density of elements // Advanced science, engineering and medicine. № 1. V. 10. 2018. P. 60-67.

Pankratov E.L. On optimization of manufacturing of a limiting amplifier // Advanced science, engineering and medicine. № 1. V. 10. 2018. P. 68-82.

Pankratov E.L. Optimization of manufacturing of current amplifier manufactured by using field-effect heterotransistor to decrease their dimensions // Advanced science, engineering and medicine. № 1. V. 10. 2018. P. 83-90.

Pankratov E.L. On possibility to optimize technological process to increase density of field-effect heterotransistors framework a summer // Advanced science, engineering and medicine. № 1. V. 10. 2018. P. 91-103.

Pankratov E.L. Optimization of manufacturing of a mixer based on heterostructures. Influence of mismatch induced stress // Advanced science, engineering and medicine. № 2. V. 10. 2018. P. 155-171.

Pankratov E.L. Optimization of manufacturing of a common mode feedback amplifier. Influence of mismatch induced stress // Advanced science, engineering and medicine. № 2. V. 10. 2018. P. 172-186.

Pankratov E.L. Optimization of manufacturing of a current amplifier based on heterostructures. Influence of mismatch induced stress and porosity of materials // Advanced science, engineering and medicine. № 2. V. 10. 2018. P. 187-203.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework operational transconductance amplifier, to increase their density // Advanced science, engineering and medicine. № 2. V. 10. 2018. P. 204-211.

Pankratov E.L. On optimization of manufacturing of a quadrature oscillator based on heterostructures. Influence of mismatch induced stress and porosity of materials // Advanced science, engineering and medicine. № 2. V. 10. 2018. P. 212–228.

Pankratov E.L. On Optimization of Manufacturing of A High-Voltage Current Driver Based on Hetero Structures to Increase Density of Their Elements. Influence of Miss-Match Induced Stress and Porosity of Materials on Technological Process // INTERNATIONAL JOURNAL OF THIN FILMS SCIENCE AND TECHNOLOGY. № 2. V. 7. 2018. P. 73-94.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework a single-stage multi-path operational amplifier, to increase their density // Advanced Nanoscience and Technology: An International Journal. № 2. V. 4. 2018. P. 1-16.

Pankratov E.L. On optimization of manufacturing of a CMOS power amplifier to increase density of elements with account miss-match induced stress and porosity of materials // International journal on organic electronics. № 1. V. 7. 2018. P. 1-15.

Pankratov E.L., Bulaeva E.A. On variation of charge carrier mobility under influence of mismatch-induced stress in a heterostructure // Multidiscipline Modeling in Materials and Structures. № 1. V. 14. 2018. P. 77–90.

Pankratov E.L., Podchishchaeva O.V. Modelling of aggregate distribution function framework an individual model of insurance underwriting // International Journal of Inspiration & Resilience Economy. № 1. V. 2. 2018. P. 18–29.

Pankratov E.L. An approach to optimize manufacture of an active quadrature signal generator based on heterostructures to increase density of elements. influence of miss-match induced stress and porosity of materials on technological process // Advanced Nanoscience and Technology: An International Journal. № 1. V. 4. 2018. P. 1-20.

Pankratov E.L. On optimization of manufacturing of a continuous time comparator based on heterostructures. Influence of missmatch-induced stress and porosity of materials // Advanced Science, Engineering and Medicine. № 6. V. 10. 2018. P. 568-584.

Pankratov E.L. On optimization of a current generation circuit // Advanced Science, Engineering and Medicine. № 6. V. 10. 2018. P. 585-595.

Pankratov E.L. On optimization of manufacturing of circuit of an amplifier. On influence mismatch-induced stress // Advanced Science, Engineering and Medicine. № 6. V. 10. 2018. P. 607–620.

Pankratov E.L. On optimization of manufacturing of fixed gain amplifier. Influence mismatch-induced stress // Advanced Science, Engineering and Medicine. № 6. V. 10. 2018. P. 621–634.

Pankratov E.L. On Optimization of Manufacturing of a Conventional Folded Cascode Operational Amplifier Based on Heterostructures to Increase Density of their Elements. Influence of Missmatch Induced Stress and Porosity of Materials on Technological Process // INTERNATIONAL JOURNAL OF ORGANIC ELECTRONICS. № 2. V. 7. 2018. P. 1-19.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors a three stage amplifier circuit, to increase their density. // International journal of electronic design and test. № 2. V. 1. 2018. P. 1-13.

Pankratov E.L. On influence of mismatch-induced stress and porosity of materials on manufacturing hetrostructure-based devices // Journal of coupled systems and multiscale dynamics. № 1. V. 6. 2018. P. 36-52.

Pankratov E.L. An approach of manufacturing of a voltage references with increased density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // International journal of innovative research in electronics and communications. № 2. V. 5. 2018. P. 24-42.

Pankratov E.L. An approach to optimize of manufacturing of a voltage reference based on heterostructures to increase density of their elements. Analysis of influence of miss-match induced stress and porosity of materials on technological process // International Journal of Advance Robotics and Expert Systems. № 2. V. 1. 2018. P. 41–60.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework a voltage reference to increase their density. Influence of miss-match induced stress and porosity of materials on technological process // International journal of organic electronics. № 3. V. 7. 2018. P. 1-19.

Pankratov E.L. On optimization of manufacturing of a dynamic comparator based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // International journal of electronic design and test. № 2. V. 1. 2018. P. 1-32.

Pankratov E.L. On optimization of manufacturing of a high voltage amplifier based on heterostructures. Influence mismatch-induced stress. // Advanced Science, Engineering and Medicine. № 9. V. 10. 2018. P. 900–914.

Pankratov E.L. Optimization of manufacturing of a shifter with two inputs based on heterostructures. Influence of miss-match induced stress and porosity of materials. // Advanced Science, Engineering and Medicine. № 9. V. 10. 2018. P. 915–930.

Pankratov E.L. On possibility to optimize technological process to increase density of field-effect heterotransistors framework a multiplayer. // Advanced Science, Engineering and Medicine. № 9. V. 10. 2018. P. 931–942.

Pankratov E.L. On approach to increase integration rate of elements of an integrator circuit. // Advanced Science, Engineering and Medicine. № 9. V. 10. 2018. P. 943–957.

Pankratov E.L. On optimization of manufacturing of a latch circuit based on heterostructures to increase density of their elements. Influence of missmatch induced stress and porosity of materials on technological process. // International Journal of Advance Robotics & Expert Systems. № 3. V. 1. 2018. P. 1-22.

Pankratov E.L. On approach to increase integration rate of elements of an comparator circuit // International journal of electronic design and test. № 3. V. 1. 2018. P. 1-20.

Pankratov E.L. An analytical approach to the analysis of industrial enterprise activity // JOURNAL OF COUPLED SYSTEMS AND MULTISCALE DYNAMICS. № 2. V. 6. 2018. P. 154-157.

Pankratov E.L. On optimization of manufacturing of elements of an binary-ROM circuit to increase their integration rate // International Journal of Advance Robotics & Expert Systems. № 3. V. 1. 2018. P. 23-43.

Pankratov E.L. On modelling of manufacturing of a high-voltage current driver framework a heterostructures under influence of miss-match induced stress and porosity of materials // Journal of Computational and Theoretical Nanoscience. № 6/7. V. 15. 2018. P. 1898–1914.

Pankratov E.L. Influence of radiation processing of material on concentration of charge carriers in a diffusion-junction rectifiers // Journal of Computational and Theoretical Nanoscience. № 6/7. V. 15. 2018. P. 1915–1923.

Pankratov E.L. Influence of substrate temperature on distribution of concentration of implanted impurity taking into account mismatch-induced stresses // Journal of Computational and Theoretical Nanoscience. № 6/7. V. 15. 2018. P. 1924–1939.

Pankratov E.L. On optimization of manufacturing of circuit of a phase shift keying modulator. Influence mismatch-induced stress // Advanced Science, Engineering and Medicine. № 11. V. 10. 2018. P. 1115–1129.

Pankratov E.L. Optimization of manufacturing of circuits of inverters. On influence mismatch-induced stress // Advanced Science, Engineering and Medicine. № 11. V. 10. 2018. P. 1100–1114.

Pankratov E.L. Optimization of manufacturing of circuits of inverters. On influence mismatch-induced stress // Advanced Science, Engineering and Medicine. № 11. V. 10. 2018. P. 1143–1150.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework a voltage controlled oscillator circuit, to increase their density // Advanced Science, Engineering and Medicine. № 11. V. 10. 2018. P. 1151–1158.

Pankratov E.L. On approach to model stabilization of anomalous distribution of concentration of radiation defects in a multilayer structure. // Multidiscipline Modeling in Materials and Structures. № 5. V. 14. 2018. P. 984–998.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework channel metal oxide semiconductor amplifier, to increase their density // Advanced Science, Engineering and Medicine. № 12. V. 10. 2018. P. 1227–1234.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework double balanced mixer circuit, to increase their density // Advanced Science, Engineering and Medicine. № 12. V. 10. 2018. P. 1235–1243.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework three-stage amplifier circuit, to increase their density // Advanced Science, Engineering and Medicine. № 12. V. 10. 2018. P. 1244–1251.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework MOS first-order filter, to increase their density // Advanced Science, Engineering and Medicine. № 12. V. 10. 2018. P. 1252–1259.

Pankratov E.L. Nonlinear profit maximization with account changing of prices // International journal of modelling, simulation and applications. № 2. V. 2. 2018. P. 9-17.

Панкратов Е.Л. О способе оптимизации технологического процесса формирования полевых транзисторов в составе схемы низкочастотного чебышевского фильтра шестого порядка с целью увеличения степени их интеграции // Журнал радиоэлектроники. № 12. 2018. С. 1-31.

Pankratov E.L. On approach to increase integration rate of elements of an operational amplifier circuit // Asian journal of mathematical sciences. № 4. V. 2. 2018. P. 54–72.

2017

Публикации в научных журналах

Pankratov E.L., E.A.Bulaeva Analysis of possibility of growth of several epitaxial layers simultaneously in gas phases framework one technological process. On possibility to change properties of epitaxial layers. // INTERNATIONAL JOURNAL ON ORGANIC ELECTRONICS. № 1. V. 6. 2017. P. 1-12.

Панкратов Е.Л. Оптимизация формирования полевых гетеротранзисторов в составе элементов памяти DRAM с целью увеличения их плотности. // Журнал радиоэлектроники. № 3. 2017. С. 1-18.

Булаева Е.А., Панкратов Е.Л. О способе увеличения плотности элементов в схемах NOR и OR, сформированных на базе полевых гетеротранзисторов // Международный журнал гуманитарных и естественных наук. № 3. Т. 1. 2017. С. 72-91.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of an amplifier to increase density of bipolar transistor framework the amplifier. // INTERNATIONAL JOURNAL ON ORGANIC ELECTRONICS. № 2. V. 6. 2017. P. 1-18.

Pankratov E.L., Bulaeva E.A. Modelling mass and heat transport during gas phase epitaxy in a reactor with rotating substrate. On possibility to improve of properties of films. // International Journal of Thin Films Science and Technology. № 2. V. 6. 2017. P. 53-59.

Pankratov E.L., Bulaeva E.A. On increasing of density of bipolar transistor framework an amplifier circuit by optimization of technological process. // Advanced science, engineering and medicine. № 4. V. 9. 2017. P. 325-338.

Pankratov E.L., Bulaeva E.A. On manufacturing of a differential amplifier. An approach of optimization to increase of density of elements. // Advanced science, engineering and medicine. № 4. V. 9. 2017. P. 339-350.

Pankratov E.L., Bulaeva E.A. Analysis of processes of mass and heat transport during gas phase epitaxy of a semiconductor structures with rotating disk substrate holder in a horizontal reactor. Журнал: Advanced science, engineering and medicine // Advanced science, engineering and medicine. № 4. V. 9. 2017. P. 351-357.

Pankratov E.L., E.A. Bulaeva On approach to increase density of field-effect transistors in an inverter circuit // Advanced Nanoscience and Technology: An International Journal.. № 1/2. V. 3. 2017. P. 1-12.

Pankratov E.L., Bulaeva E.A. Analysis of possibility of Increasing of density of elements of integrated circuits. // Journal of Computational and Theoretical Nanoscience. № 5. V. 14. 2017. P. 2083–2121.

Pankratov E.L., Bulaeva E.A. Optimization of manufacturing of field-effect transistors framework an inverter to decrease their dimensions // Journal of Computational and Theoretical Nanoscience. № 5. V. 14. 2017. P. 2389–2396.

Pankratov E.L., E.A. Bulaeva An approach to optimize manufacturing of a multistage inverter to increase density of field-effect heterotransistors // Journal of Computational and Theoretical Nanoscience. № 5. V. 14. 2017. P. 2528–2538.

Pankratov E.L. On optimization of manufacturing of an asymmetric three-phase multi-level inverter // Journal of Computational and Theoretical Nanoscience. № 5. V. 14. 2017. P. 2539–2552.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of an cascaded multi cell trans-Z-source inverter // Journal of Computational and Theoretical Nanoscience. № 5. V. 14. 2017. P. 2553–2566.

Pankratov E.L., E.A. Bulaeva Analysis of possibility to increase density of elements framework symmetrical and asymmetrical current source multilevel inverters based on field-effect transistors by optimization of technological process // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 2995–3009.

Pankratov E.L., E.A. Bulaeva On optimization of manufacturing of a multifunction first-order filter to increase density of elements // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3010–3017.

Pankratov E.L., E.A. Bulaeva On optimization of manufacturing of dual-path inverters based on heterostructures to increase density of their elements. Influence of miss-match induced stress // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3018–3033.

Pankratov E.L., E.A. Bulaeva On optimization of manufacturing of a drive system with two-level inverter based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3034–3049.

Pankratov E.L., E.A. Bulaeva On optimization of manufacturing of CMOS NAND logical elements based on heterostructures to increase density of their elements. Influence of miss-match induced stress // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3050–3064.

Pankratov E.L., E.A. Bulaeva On Optimization of manufacturing of energy efficient SRAM cell based on heterostructures to increase density of their elements. Influence of miss-match induced stress // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3065–3079.

Pankratov E.L., E.A. Bulaeva On optimization of manufacturing of current comparator circuit based on heterostructures to increase density of their elements. Influence of miss-match induced stress // Journal of Computational and Theoretical Nanoscience. № 6. V. 14. 2017. P. 3080–3094.

Pankratov E.L. On approach to optimize manufacturing of a transistors with two sources to decrease their dimensions // International journal of organic electronic. № 3. V. 6. 2017. P. 1-11.

Pankratov E.L., Bulaeva E.A. On increasing of integration rate of elements in a multi-level inverter // International Journal of Intelligent Computing and Cybernetics. № 3. V. 42. 2017. P. 272-286.

Pankratov E.L., Bulaeva E.A. On Optimization of manufacturing of a rectifier based on heterostructures to increase density of their elements. Influence of miss-match induced stress on technological process // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3510–3525.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of a DICE memory cell based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials. // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3526–3541.

Pankratov E.L., Bulaeva E.A. On approach for analysis of mass transport during magnetron sputtering. On changing of properties of films during changing of sputtering regimes // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3542–3547.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of transistors in hybrid cascaded multilevel inverter to increase their density // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3548–3555.

Pankratov E.L., Bulaeva E.A. On development of analytical approaches to prognosis of epitaxial grows from gas phase to improve properties of films // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3556–3563.

Pankratov E.L., Bulaeva E.A. On approach to decrease dimensions of element of power amplifier with increasing of their density // Journal of Computational and Theoretical Nanoscience. № 7. V. 14. 2017. P. 3564–3575.

Pankratov E.L., Bulaeva E.A. On approaches of improvement of materials for manufacture of integrated circuits // Journal of Computational and Theoretical Nanoscience. № 8. V. 14. 2017. P. 4053–4085.

Pankratov E.L. Influence of temperature of substrate during the growth of a heterostructure on properties of materials // Multidiscipline Modeling in Materials and Structures. № 2. V. 13. 2017. P. 326-330.

Pankratov E.L., Bulaeva E.A. On approach to increase integration rate of double-gate heterotransistors. // International Journal of Nanoscience. № 4. V. 16. 2017. P. 1650039–165005.

Pankratov E.L. On Optimization of manufacturing of a single-bit CMOS adder based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4694–4710.

Pankratov E.L. On Analytical Approach of Prognosis of Manufacturing of an Adder for Optimization of Technological Process // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4727–4734.

Pankratov E.L. Optimization of manufacturing of an amplifier circuit manufactured by using field-effect heterotransistor to decrease their dimensions. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4735–4742.

Pankratov E.L. On increasing of density of field-effect transistors in an amplifier circuit by optimization of technological process. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4743–4754.

Pankratov E.L. An approach to increase density of field-effect heterotransistors framework a flip-flop circuit of a DICE. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4755–4766.

Pankratov E.L. On approach of optimization of manufacturing of memory cells based on field-effect heterotransistors to increase their density. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4767–4774.

Pankratov E.L. On approach to optimize manufacturing of a single-bit CMOS adders based on heterostructures to increase integration rate of their elements. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4775–4790.

Pankratov E.L. An approach for optimization of manufacturing of a single-bit CMOS two-phase RS Flip-Flop with direct couplings based on heterostructures to increase integration rate of their elements. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4791–4802.

Pankratov E.L. On optimization of technological process to increase density of heterotransistors framework a cascade connection of two-phase CMOS logic elements. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4803–4814.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework circuit, including into itself two coupled logical element XOR, to increase their density. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4815–4822.

Pankratov E.L. On approach to optimize manufacturing of a the traditional dynamic type domino element to increase integration rate of their elements. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4823–4838.

Pankratov E.L. On approach to optimize manufacturing of a modified circuit of domino element to increase integration rate of field-effect heterotransistor. Influence mismatch-induced Stress. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4839–4853.

Pankratov E.L. On approach to optimize manufacturing of bipolar heterotransistors framework circuit of a reducing mixer to increase their integration rate. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4854–4869.

Pankratov E.L. On approach to optimize manufacturing of bipolar heterotransistors framework circuit of a tetra-cascade amplifier to increase their integration rate. Influence mismatch-induced stress. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4870–4884.

Pankratov E.L. On approach to optimize manufacturing of bipolar heterotransistors framework circuit of an operational amplifier to increase their integration rate. Influence mismatch-induced stress. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4885–4899.

Pankratov E.L. On optimization of manufacturing of a voltage-controlled circuit based on heterostructures to increase density of their elements. Influence of miss-match induced stress on technological process. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4900–4916.

Pankratov E.L. Influence of mismatch-induced stress in an optimized p–n-heterojunction on charge carriers transport. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4917–4931.

Pankratov E.L. On approach to optimize manufacturing of a power stage inverter to increase integration rate of their elements. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4932–4946.

Pankratov E.L. On decreasing of dimensions of transistors with two sources by optimization of technological process. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4947–4954.

Pankratov E.L. Influence of mismatch-induced stress in a heterostructure on value of charge carrier mobility. // Journal of Computational and Theoretical Nanoscience. № 10. V. 14. 2017. P. 4955–4963.

Pankratov E.L. On analytical prognosis Of epitaxial grows from gas phase. A possibility to improve properties of films. // International journal of thin films science and technology. № 3. V. 6. 2017. P. 99-106.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework circuit of frequency dividers, to increase their density. // Advanced science, engineering and medicine. № 6. V. 9. 2017. P. 505–512.

Pankratov E.L. On optimization of technological process to increase density of heterotransistors framework a current starved voltage controlled oscillator. // Advanced science, engineering and medicine. № 6. V. 9. 2017. P. 513–525.

Pankratov E.L. On approach to optimize manufacturing of a frequency divider using true single-phase clock to increase integration rate of their elements. // Advanced science, engineering and medicine. № 7. V. 9. 2017. P. 552–567.

Pankratov E.L. On optimization of technological process to increase density of heterotransistors framework a frequency divider. // Advanced science, engineering and medicine. № 7. V. 9. 2017. P. 568–579.

Pankratov E.L. On optimization of manufacturing of field-effect heterotransistors framework circuit of frequency dividers with inverter, to increase their density. // Advanced science, engineering and medicine. № 7. V. 9. 2017. P. 580–587.

Pankratov E.L. On approach to optimize manufacturing of bipolar heterotransistors framework circuit of a seven level cascaded inverter to increase their integration rate. Influence mismatch-induced stress. // Advanced science, engineering and medicine. № 7. V. 9. 2017. P. 588–602.

Pankratov E.L. On model of stabilization of distribution of concentration of radiation defects in a multilayer structure. // Advanced science, engineering and medicine. № 7. V. 9. 2017. P. 603-611.

Pankratov E.L. On optimization of manufacturing of a floating point multiplier based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process. // Advanced Science, Engineering and Medicine. № 8. V. 9. 2017. P. 670-677.

Pankratov E.L. On optimization of manufacturing of elements framework ROM encoder to increase their density. // Advanced science, engineering and medicine. № 8. V. 9. 2017. P. 678-685.

Pankratov E.L. On 0ptimization of manufacturing of elements framework AND-NOT to increase their density. // Advanced science, engineering and medicine. № 8. V. 9. 2017. P. 686-693.

Pankratov E.L. On approach to optimize manufacturing of field-effect heterotransistors framework circuit of a high-voltage element OR to increase their integration rate. On influence mismatch-induced stress. // Advanced science, engineering and medicine. № 8. V. 9. 2017. P. 694-708.

Pankratov E.L. On approach to increase density of field-effect heterotransistors framework circuit of a high-voltage element OR by optimization of technological process. // Advanced Science, Engineering and Medicine. № 9. V. 9. 2017. P. 740-754.

Pankratov E.L. On optimization of manufacturing of a high-voltage element AND with two inputs based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process. // Advanced Science, Engineering and Medicine. № 9. V. 9. 2017. P. 755-771.

Pankratov E.L. On optimization of manufacturing of voltage converter based on heterostructures to increase density of their elements. Influence of miss-match induced stress. // Advanced Science, Engineering and Medicine. № 9. V. 9. 2017. P. 772-786.

Pankratov E.L. On optimization of manufacturing of two-phase logic circuit based on heterostructures to increase density of their elements. Influence of miss-match induced stress. // Advanced science, engineering and medicine. № 9. V. 9. 2017. P. 787–801.

Pankratov E.L. On optimization of manufacturing of a floating point multiplier based on heterostructures to increase density of their elements. Influence of miss-match induced stress and porosity of materials on technological process. // Advanced science, engineering and medicine. № 8. V. 9. 2017. P. 653-669.

Pankratov E.L. On optimization of manufacturing of a voltage controlled oscillator to increase density of elements. // Advanced Science, Engineering and Medicine. № 10. V. 10. 2017. P. 837-848.

Pankratov E.L. On optimization of manufacturing of power amplifier circuit based on bipolar heterostructures to increase density of their elements. Influence of miss-match induced stress. // Advanced Science, Engineering and Medicine. № 10. V. 10. 2017. P. 849–863.

Pankratov E.L. Pankratov. On optimization of manufacturing of multilevel inverter circuit based on bipolar heterostructures to increase density of their elements. Influence of miss-match induced stress. // Advanced science, engineering and medicine. № 10. V. 10. 2017. P. 864–878.

Pankratov E.L. On optimization of manufacturing of a mixer based on heterostructures to increase density of their elements. Influence of miss-match induced stress on technological process. // Advanced Science, Engineering and Medicine. № 10. V. 10. 2017. P. 879–894.

Болдыревский П.Б., Панкратов Е.Л. МОДЕЛИ ПРОЦЕССОВ ТЕПЛОМАССОПЕРЕНОСА ПРИ ЭПИТАКСИИ ПОЛУПРОВОДНИКОВЫХ СЛОЕВ ИЗ ГАЗОВОЙ ФАЗЫ // ИЗВЕСТИЯ ВЫСШИХ УЧЕБНЫХ ЗАВЕДЕНИЙ. ПОВОЛЖСКИЙ РЕГИОН. ФИЗИКО-МАТЕМАТИЧЕСКИЕ НАУКИ. № 2. Т. -. 2017. С. 91-107.

Pankratov E.L. On approach to analyze nonlinear model of mass and heat transport during gas phase epitaxy. A possibility to improve properties of films. // International Journal on Organic Electronics. № 4. V. 6. 2017. P. 1-12.

Pankratov E.L. On increasing of density of transistors in a hybrid cascaded multilevel inverter. // Multidiscipline Modeling in Materials and Structures. № 4. V. 13. 2017. P. 664-677.

Pankratov E.L. On prognosis of technological process to optimize manufacturing of a heterodiodes framework a full-wave rectifier framework, to increase their density and performance. // Advanced Science, Engineering and Medicine. № 12. V. 9. 2017. P. 1035–1042.

Pankratov E.L. Optimization of manufacturing of a full-wave rectifier with coupled gate based on heterostructures. Influence of miss-match induced stress. // Advanced science, engineering and medicine. № 12. V. 9. 2017. P. 1043–1058.

Pankratov E.L. Optimization of manufacturing of an intermediate frequency amplifier based on heterostructures. Influence of miss-match induced stress and porosity of materials. // Advanced science, engineering and medicine. № 12. V. 9. 2017. P. 1059–1075.

Pankratov E.L. On optimization of manufacturing of a power-down switch. // Advanced Science, Engineering and Medicine. № 12. V. 9. 2017. P. 1076–1090.

Pankratov E.L. On optimization of manufacturing of a transimpedance amplifier to increase density of elements. // Advanced Science, Engineering and Medicine. № 12. V. 10. 2017. P. 1091–1098.

Pankratov E.L. ON APPROACH TO OPTIMIZE MANUFACTURING OF A TRANSISTORS WITH TWO SOURCES TO DECREASE THEIR DIMENSIONS // INTERNATIONAL JOURNAL ON ORGANIC ELECTRONICS. № 3. V. 6. 2017. P. 1-11.

2016

Труды (тезисы) конференции

Болдыревский П.Б., Панкратов Е.Л., Ревин М.В. Влияние естественной конвекции в газовой фазе на процессы mocvd эпитаксии полупроводниковых структур // Перспективы развития технологий обработки и оборудования в машиностроении. Сборник научных статей Международной научно-практической конференции. Курск, ЮЗГУ. 2016. С. 29-31.

Панкратов Е.Л., Е.А. Ьулаева Уменьшение механических напряжений в гетероструктуре при радиационном воздействии // Тезисы докладов. Шестая Всероссийская конференция “Физические и физико-химические основы ионной имплантации”, Тезисы докладов. Нижний Новгород. 24-27 октября.. 2016. С. 84.

Pankratov E.L., P.B. Boldyrevskii Modeling and analysis of convective process in gas phase during MOCVD epitaxy of semiconducting layers in reaction chamber with rotating disk substrate holder // Book of abstract. Collaborative Conference on Crystal Growth (3CG). Book of abstract. September 4-8. San Sebastian, Spain. 2016. P. 21-22.

Публикации в научных журналах

Pankratov E.L., Bulaeva E.A. About manufacturing vertical field-effect heterotransistor to increase their compactness. // Quantum matter. № 1. V. 5. 2016. P. 19-25.

Pankratov E.L., Bulaeva E.A. On approach of optimization of manufacturing of a heterotransistors with two gates to decrease their dimensions. // Nano Science and Nano Technology: An Indian Journal.. № 1. V. 10. 2016. P. 13-29.

Pankratov E.L., Bulaeva E.A. Optimization of technological process to decrease dimensions of circuits XOR, manufectured based on field-effect heterotransistors // International Journal in Foundations of Computer Science & Technology. № 1. V. 6. 2016. P. 1-20.

Pankratov E.L., E.A. Bulaeva On optimization of regimes of epitaxy from gas phase in a horizontal reactor // Materials Science : An Indian Journal. № 6. V. 14. 2016. P. 191-201.

Pankratov E.L., E.A. Bulaeva Analysis of regimes of growth of epitaxial layers in gas phase epitaxy reactors to increase homogeneity of properties of the layers // Materials Science: An Indian Journal. № 9. V. 14. 2016. P. 347-358.

Pankratov E.L., E.A.Bulaeva Influence of temperature of ion implantation on distribution of concentration of dopant in an implanted-junction rectifiers // International Journal of Applied Control, Electrical and Electronics Engineering. № 1. V. 4. 2016. P. 1-15.

Pankratov E.L., E.A. Bulaeva Influence of overlayers on depth of implanted-heterojunction rectifiers // International Journal of Information Technology, Modeling and Computing. № 1. V. 4. 2016. P. 37-51.

Pankratov E.L., E.A. Bulaeva Influence of porosity of epitaxial layer on quantity of radiation defects generated during radiation processing in a multilayer structure // Condensed matter physics: An International Journal. № 1. V. 1. 2016. P. 27-38.

Pankratov E.L., E.A. Bulaeva Modification of dopant concentration profile in a field-effect heterotransistor for modification energy band diagram // Advances in Materials Science and Engineering: An International Journal. № 3. V. 1. 2016. P. 1-19.

Pankratov E.L., E.A. Bulaeva Optimization of manufacturing of circuits XOR to decrease their dimensions // International Journal of Recent advances in Physics. № 1. V. 5. 2016. P. 1-18.

Pankratov E.L., E.A. Bulaeva On optimization ofmanufacturing of a multi-level invertor to increase density of elements // Nano Science and Nano Technology: An Indian Journal. № 2. V. 10. 2016. P. 55-66.

Pankratov E.L., E.A. Bulaeva On modification of properties of p-n-junctions during overgrowth // International Journal of Information Technology, Modeling and Computing. № 2. V. 4. 2016. P. 35-54.

Pankratov E.L., E.A. Bulaeva Dependence of charge carriers mobility in the p-n-heterojunctions on composition of multilayer structure // Advances in Materials Science and Engineering: An International Journal. № 2. V. 3. 2016. P. 23-42.

Pankratov E.L., E.A. Bulaeva Controlling of depth of dopant diffusion layer in a material by time modulation of diffusion coefficient // International Journal on Cybernetics & Informatics. № 3. V. 5. 2016. P. 1-7.

Pankratov E.L., E.A. Bulaeva On approach to decrease dimensions of field-effect transistors framework element of SRAM with increasing their density // International Journal in Foundations of Computer Science & Technology. № 4. V. 6. 2016. P. 19-30.

Pankratov E.L., E.A. Bulaeva Optimization of technological process to decrease dimensions of circuits XOR, manufectured based on field-effect heterotransistors // International Journal of Information Technology, Modeling and Computing. № 1. V. 4. 2016. P. 1-18.

Панкратов Е.Л., Е.А. Булаева Влияние заращивания диффузионно и ионно легированных областей гетероструктуры на распределения в ней концентраций примесей // Журнал радиоэлектроники. № 5. 2016. С. 1-25.

Pankratov E.L., E.A. Bulaeva Using porosity of epitaxial layer to decrease quantity of radiation defects generated during radiation processing of a multilayer structure // Advances in Materials Science and Engineering: An International Journal. № 2. V. 3. 2016. P. 43-53.

Pankratov E.L., E.A. Bulaeva On relation between porosity of epitaxial layer and quantity of radiation defects generated during radiation processing in a multilayer structure // Journal of Nanoscience. V. 2016. 2016. P. Article ID 3491790.

Pankratov E.L., E.A. Bulaeva On increasing of density of elements in a multivibrator on bipolar transistors // The International Journal of Computational Science, Information Technology and Control Engineering. № 3. V. 3. 2016. P. 13-28.

Панкратов Е.Л., Болдыревский П.Б. Задача конвективной диффузии из газовой фазы к вращающемуся диску // Прикладная механика и техническая физика. № 4. 2016. С. 74-83.

Pankratov E.L., E.A. Bulaeva Nano Science & Nano Technology: An Indian Journal // Modification of Distributions of Concentrations Dopants during Overgrowth of Infused-junction and Implanted-junction Rectifiers. № 3. V. 10. 2016. P. 1-23.

Pankratov E.L., E.A. Bulaeva On approach of estimation time scales of relaxation of concentration of charge carriers in high-doped semiconductor // International Journal of Information Technology, Modeling and Computing. № 3. V. 4. 2016. P. 1-9.

Pankratov E.L., E.A.Bulaeva On Approach of Estimation of Time Scales of Mass Transport // Journal of Computational Intelligence and Electronic Systems. № 1. V. 5. 2016. P. 82-87.

Pankratov E.L., E.A. Bulaeva On decreasing of dimensions of field-effect transistors with several sources // Advances in Materials Science and Engineering: An International Journal. № 3. V. 3. 2016. P. 1-15.

Панкратов Е.Л., Е.А. Булаева О способе увеличения плотности полевых транзисторов в составе усилителя мощности // Журнал радиоэлектроники. № 9. 2016. С. 1-23.

Pankratov E.L. On optimization of technological process to increase density of elements in circuits nand and and, based on field-effect heterotransistors // International Journal of Modelling, Simulation and Applications. № 1. V. 1. 2016. P. 39-55.

Pankratov E.L., E.A. Bulaeva On Increasing of Integration Rate of Elements in a Multi-Level Invertor // Journal of Nanoengineering and Nanomanufacturing. № 2. V. 6. 2016. P. 121–129.

Pankratov E.L. Acceleration of Dopant Diffusion by Choosing Spatial Dependence of Diffusion Coefficient // Journal of Nanoengineering and Nanomanufacturing. № 2. V. 6. 2016. P. 151–153.

Pankratov E.L., E.A. Bulaeva Analysis of manufacturing of voltage restore to increase density of elements of the circuit // International Journal on Organic Electronics. № 1/2/3/4. V. 5. 2016. P. 1-19.

Pankratov E.L., E.A. Bulaeva Variation of properties of films during growth in a vertical reactor for gas phase epitaxy with variation of parameters of technological process with account native convection // Materials Science: An Indian Journal. № 9. V. 14. 2016. P. 364-375.

Панкратов Е.Л., Е.А. Булаева О способе увеличения плотности элементов однофазного многоуровнего инвертора // Журнал радиоэлектроники. № 11. 2016. С. 1-24.

Pankratov E.L., E.A. Bulaeva On estimation of time scales of mass transport in inhomogenous material // International Journal of Information Technology, Modeling and Computing. № 4. V. 4. 2016. P. 17-24.

Pankratov E.L., E.A. Bulaeva An analytical approach for analysis and optimization of formation of field-effect heterotransistors // Multidiscipline Modeling in Materials and Structures. № 4. V. 12. 2016. P. 578-604.

Pankratov E.L., E.A. Bulaeva Optimization of spatial dependence of diffusion coefficient for acceleration of dopant diffusion // Multidiscipline Modeling in Materials and Structures. № 4. V. 12. 2016. P. 672-677.

Pankratov E.L., E.A. Bulaeva On optimization of growth from gas phase in a vertical reactor with account native convection to improve properties of films // Multidiscipline Modeling in Materials and Structures. № 4. V. 12. 2016. P. 712-725.

Pankratov E.L., E.A. Bulaeva On optimization of technological process to decrease dimensions of transistors with several sources // Micro and Nanosystems. № 1. V. 8. 2016. P. 52-64.

Pankratov E.L., E.A. Bulaeva Optimization of manufacturing of bipolar transistors framework an inverter to increase their density. // Journal of Nanoengineering and Nanomanufacturing.. № 3. V. 6. 2016. P. 193–200.

Pankratov E.L., E.A. Bulaeva On prognosis of technological process to optimize manufacturing of an invertors to increase density their of elements. // Journal of Nanoengineering and Nanomanufacturing.. № 4. V. 6. 2016. P. 313–326.

Pankratov E.L., E.A. Bulaeva On approach to increase density of elements of voltage restore. // Journal of Nanoengineering and Nanomanufacturing.. № 4. V. 6. 2016. P. 251–264.

Pankratov E.L., E.A. Bulaeva Analysis of possibility of growth of several epitaxial layers simultaneously in gas phases framework one technological process. On possibility to change properties of epitaxial layers. // Journal of Nanoengineering and Nanomanufacturing.. № 4. V. 6. 2016. P. 270–277.

2015

Труды (тезисы) конференции

Панкратов Е.Л., Тарасова Е.А., Оболенская Е.С., Козлов В.А., Пузанов А.С., Оболенский С.В. Влияние радиационно-стимулированной диффузии на процессы восстановления работоспособности планарных диодов и транзисторов после импульсного гамма-нейтронного воздействия // Тезисы докладов 18 всероссийской конференции по радиационной стойкости электронных систем "Стойкость-2015". Т.1 с 2. 2015. С. 63-64.

Boldyrevskii P.B., Pankratov E.L. Convection diffusion model accompanied with gas phase epitaxy of semiconduting layers. // Book of abstracts of conference "Energy materials Nanotechnology".. Book of abstracts of conference "Energy materials Nanotechnology", 14-17 December, 2015. Hong Kong, China. P.27.. 2015. P. 27.

Болдыревский П.Б., Панкратов Е.Л. РАСЧЕТ ХАРАКТЕРИСТИК ДИФФУЗИОННОГО МАССОПЕРЕНОСА ПРИ MOCVD ЭПИТАКСИИ АРСЕНИДА ГАЛЛИЯ В ГОРИЗОНТАЛЬНОЙ РЕАКЦИОННОЙ КАМЕРЕ // Современные материалы, техника и технология. Материалы международной научно-практической конференции, ЮЗГУ, Курск. 2015. С. 30-33.

Болдыревский П.Б., Панкратов Е.Л. МОДЕЛЬ КОНВЕКТИВНОЙ ДИФФУЗИИ ПРОЦЕССА МОС-ГИДРИДНОЙ ЭПИТАКСИ ПОЛУПРОВОДНИКОВЫХ СТРУКТУР // Техника и технологии: пути инновационного развития. Сборник научных трудов 5-ой Международной научно-практической конференции. Ответственный редактор: Горохов А.А.. Курск. 2015. С. 40-42.

Публикации в научных журналах

Pankratov E.L., E.A. Bulaeva On approach to optimize manufacturing logical elements based on field-effect transistors. // Journal of Nanoengineering and Nanomanufacturing.. № 2. V. 5. 2015. P. 151-165.

Pankratov E.L., Bulaeva E.A. About some ways to decrease quantity of defects in materials for solid state electronic devices and diagnostics of their realization // Reviews in Theoretical Science. № 2. V. 3. 2015. P. 177-215.

Pankratov E.L., Bulaeva E.A. On optimization of regimes of epitaxy from gas phase. some analytical approaches to model physical processes in reactors for epitaxy from gas phase during growth films // Reviews in Theoretical Science. № 4. V. 3. 2015. P. 365-398.

Pankratov E.L., Bulaeva E.A. About increasing of integration rate of drift heterobipolar // Journal of Mechatronics. № 1. V. 3. 2015. P. 62-78.

Pankratov E.L., Bulaeva E.A. On analytical approach for analysis influence of mismatch-induced stress in a heterostructure on distributions of concentrations of dopants in a multiemitter heterotransistor // On analytical approach for analysis influence of mismatch-induced stress in a heterostructure on distributions of concentrations of dopants in a multiemitter heterotransistor. № 1. V. 2. 2015. P. 71-91.

Pankratov E.L., Bulaeva E.A. Optimization of dopant diffusion and ion implantation to increase integration rate of field-effect heterotransistors. An approach to simplify construction of the heterotransistors // International Journal of Recent advances in Physics. № 1. V. 4. 2015. P. 43-54.

Pankratov E.L., Bulaeva E.A. Optimization of manufacturing of emitter-coupled logic to decrease surface of chip // International Journal of Modern Physics B. № 5. V. 29. 2015. P. 1550023-1-1550023-12.

Pankratov E.L. An approach to increase the integration rate of planar drift heterobipolar transistors // Materials science in semiconductor processing. V. 34. 2015. P. 260-268.

Pankratov E.L., Bulaeva E.A. On approach to manufacture of a horizontal complementary field-effect heterotransistor with common gate // Journal of Computational and Theoretical Nanoscience. № 6. V. 12. 2015. P. 976-990.

Pankratov E.L. On prognozisys of manufacturing double-base heterotransistor and optimization of technological process // Advances in Materials Science and Engineering: An International Journal. № 1. V. 2. 2015. P. 1-12.

Pankratov E.L., Bulaeva E.A. An analytical approach to model manufacturing a drift heterobipolar transistors. On approach to optimize technological process to increase integration rate // International Journal of Computational Materials Science And Engineering. № 1. V. 4. 2015. P. 1550006-1--1550006-21.

Pankratov E.L., Bulaeva E.A. An approach to model optimization of manufacturing of emitter-coupled logic // International Journal of Computational Science, Information Technology and Control Engineering. № 1/2. V. 2. 2015. P. 15-25.

Pankratov E.L., Bulaeva E.A. On prognozisys of manufacturing double-base heterotransistor and optimization of technological process // Advances in Materials Science and Engineering: An International Journal (MSEJ),. № 1. V. 2. 2015. P. 1-12.

Pankratov E.L., Bulaeva E.A. An approach to model optimization of manufacturing of emitter-coupled logic // International Journal of Recent advances in Physics. № 2. V. 4. 2015. P. 1-24.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of field-effect heterotransistors with several channels // Nano Science and Nano Technology. An Indian Journal. № 4. V. 9. 2015. P. 43-60.

Pankratov E.L., Bulaeva EA. Variation of Mismatch-Induced Stress on a Heterostructure with Changing Temperature of Growth // Advances in Materials Science and Engineering: An International Journal. № 2. V. 2. 2015. P. 1-10.

Pankratov E.L., Bulaeva E.A. Optimization of Pressure in Epitaxial Growth from Gas Phase System to Decrease Energy Costs // Quantum Matter. № 5. V. 4. 2015. P. 456-457.

Pankratov E.L., Bulaeva E.A. About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors // The International Journal of Multiphysics. № 2. V. 9. 2015. P. 109-136.

Pankratov E.L., Bulaeva E.A. On approach to decrease dimensions of element OR manufactured by using field-effect heterotransistor // Nano Science and Nano Technology. An Indian Journal. № 5. V. 9. 2015. P. 172-190.

Pankratov E.L., Bulaeva E.A. On optimization of doping of a heterostructure during manufacturing of p-i-n-diodes // International Journal of Computational Science, Information Technology and Control Engineering. № 3. V. 2. 2015. P. 1-17.

Pankratov E.L., Bulaeva E.A. Optimization of manufacturing of logical elements "AND" manufactured by using field-effect heterotransistor to decrease their dimensions // International Journal of Computational Science, Information Technology and Control Engineering. № 3. V. 2. 2015. P. 1-17.

Pankratov E.L., Bulaeva E.A. On vertical integration framework element of transistor-transistor logic // International Journal of Applied Control, Electrical and Electronics Engineering. № 3. V. 3. 2015. P. 1-23.

Pankratov E.L., Bulaeva E.A. An approach to decrease dimentions of logical elements based on bipolar transistor // International Journal on Computational Science & Applications. № 4. V. 5. 2015. P. 1-18.

Pankratov E.L., Bulaeva E.A. On controlling of gas and heat transport in a vertical reactor process to improve properties of epitaxial layers // Nano Science and Nano Technology. An Indian Journal. № 5. V. 9. 2015. P. 172-190.

Pankratov E.L., Bulaeva E.A. Using Buffer Porous Layers to Decrease Mismatch-Induced Stress in Heterobipolar Transistor // Journal Mechatronics. № 2. V. 3. 2015. P. 157-173.

Панкратов Е.Л., Булаева Е.А. Об аналитической методике анализа процессов массо- и теплопереноса // Журнал радиоэлектроники. № 9. 2015. С. 1-28.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing of multichannel heterotransistors to increase their integration rate // International Journal of Recent advances in Physics. № 4. V. 4. 2015. P. 1-14.

Pankratov E.L., Bulaeva E.A. On optimization of manufacturing planar double-base heterotransistors to decrease their dimensions. // International Journal of Applied Control, Electrical and Electronics Engineering.. № 4. V. 3. 2015. P. 13-24.

Pankratov E.L., Bulaeva E.A. On approach of optimization of formation of inhomogenous distributions of dopant in a field-effect heterotransistors. // International Journal on Computational Science & Applications. № 6. V. 5. 2015. P. 17-37.

Болдыревский П.Б., Панкратов Е.Л. Задача конвективной диффузии из газовой фазы к вращающемуся диску // Прикладная механика и техническая физика.. № 4. 2015. С. 117.

2014

Труды (тезисы) конференции

Панкратов Е.Л. О некоторых способах уменьшения количества радиационных дефектов в устройствах, формируемых с помощью ионной имплантации // Пятая Всероссийская конференция “Физические и физико-химические основы ионной имплантации”. Тезисы докладов. С. 81. 2014. С. 81.

Публикации в научных журналах

Pankratov E.L., Bulaeva E.A. Decreasing of mechanical stress in a semiconductor heterostructure by radiation processing // Journal of Computational and Theoretical Nanoscience. № 1. V. 11. 2014. P. 91-101.

Pankratov E.L., Bulaeva E.A. On the relations between porosity of heterostructured materials and mismatch-induced stress // Journal of Computational and Theoretical Nanoscience. № 2. V. 11. 2014. P. 497-503.

Панкратов Е.Л., О.П. Гуськова, М.Н. Дроздов, Н.Д. Абросимова, В.М. Воротынцев Аномальное распределение германия, имплантированного в диэлектрический слой структуры КНИ, после отжига радиационных дефектов // Физика и техника полупроводников. № 5. Т. 48. 2014. С. 631-635.

Pankratov E.L. Decreasing dimensions of planar field-effect transistors by using native inhomogeneity of heterostructure // Applied Nanoscience. № 1. V. 4. 2014. P. 77-84.

Pankratov E.L., Bulaeva E.A. Modeling of manufacturing of a field-effect transistor to determine conditions to decrease length of channel // International Journal on Computational Science and Applications. № 1. V. 4. 2014. P. 43-52.

Pankratov E.L., Pankratov E.L. Analytical approach to model mass transport in a heterostructure during manufacturing an implanted-junction rectifiers // Quantum matter. № 5. V. 3. 2014. P. 454-459.

Pankratov E.L., Bulaeva E.A. Decreasing of quantity of radiation defects in implanted-junction heterorectifiers by using overlayers // International Journal on Computational Science and Applications. № 2. V. 4. 2014. P. 21-29.

Pankratov E.L., Pankratov E.L. Optimization of annealing of dopant to increase sharpness of p-n-junctions in a heterostructure with drain of dopant // Applied Nanoscience. № 1. V. 4. 2014. P. 537-541.

Pankratov E.L., Bulaeva E.A. An approach to optimize regimes of manufacturing of complementary horizontal field-effect transistor // International Journal of Recent Advances in Physics. № 2. V. 3. 2014. P. 55-73.

Pankratov E.L., Bulaeva E.A. Optimization of annealing of dopants and radiation defects during manufacturing a heterobipolar transistors // Journal of Mechatronics. № 1. V. 2. 2014. P. 69-76.

Pankratov E.L., Bulaeva E.A. An approach for optimization of manufacture multiemitter heterotransistors // Advanced Nanoscience and Technology: An International Journal. № 1. V. 1. 2014. P. 1-20.

Pankratov E.L., Bulaeva E.A. Modeling of manufacturing of a field-effect transistor to determine conditions to decrease length of channel // Advanced Nanoscience and Technology: An International Journal. № 1. V. 1. 2014. P. 31-53.

Pankratov E.L., Bulaeva E.A. Using inhomogeneity of heterostructure and optimization of annealing to decrease dimensions multyemitter heterotransistors // International Journal on Computational Science and Applications. № 3. V. 4. 2014. P. 25-37.

Pankratov E.L., Bulaeva E.A. Analysis of nonlinear model of gas dynamics in a vertical reactor for gas phase epitaxy // International Journal of Computational Materials. № 3. V. 3. 2014. P. 1450013-1450026.

Pankratov E.L., Bulaeva E.A. Decreasing of dimensions of p–i–n-Diodes by using inhomogeneity of materials // Quantum matter. № 6. V. 3. 2014. P. 515-518.

Pankratov E.L., Bulaeva E.A. An approach to decrease dimensions of field-effect transistors without p-n-junctions // International Journal of Modern Physics B. № 25. V. 28. 2014. P. 1450190-1--1450190-17.

Pankratov E.L., Bulaeva E.A. Miniaturization of multi-emitter heterotransistors, manufactured by diffusion or ion implantation // Journal of coupled systems and multiscale dynamics. № 1. V. 2. 2014. P. 28-36.

Pankratov E.L., Bulaeva E.A. Modeling of redistribution of infused dopant in a multilayer structure dopant under influence of variation of pressure of vapor of the dopant // Applied mathematics and sciences: an international journal. № 2. V. 1. 2014. P. 53-64.

Pankratov E.L., Bulaeva E.A. On approach to increase homogeneity of properties of films by optimization of grown // Journal of Mechatronics. № 2. V. 2. 2014. P. 136-142.

Pankratov E.L. Optimization of manufacture of field-effect heterotransistors without p-n-junctions to decrease their dimensions // International Journal of Recent Advances in Physics. № 3. V. 3. 2014. P. 1-16.

Pankratov E.L., Bulaeva E.A. Changing electrical properties in diffusion-Junction and implanted-junction rectifiers under influence of porosity of materials // Innovations in Corrosion and Materials Science. № 1. V. 4. 2014. P. 37-62.

Pankratov E.L., Bulaeva E.A. Modeling of manufacture multiemitter heterotransistors // An approach of optimization. Journal of Surface and Interface of Materials. № 2. V. 2. 2014. P. 128-144.

Pankratov E.L., Bulaeva E.A. An approach to decrease dimensions of drift hetero-bopolar transistors // International Journal on Computational Sciences & Applications. № 5. V. 4. 2014. P. 27-52.

Pankratov E.L., Bulaeva E.A. On possibility of optimization of vertical integration of field-effect heterotransistors // Journal of Mechatronics. № 2. V. 2. 2014. P. 152-167.

Pankratov E.L., Bulaeva E.A. Optimization of technological process to increase integration rate of field-effect heterotransistors in thin films structures // Journal of Mechatronics. № 4. V. 2. 2014. P. 291-300.

Pankratov E.L., Bulaeva E.A. Modeling of manufacturing of field-effect heterotransistors without p-n-junctions to optimize decreasing their dimensions // International Journal of Nanoscience and Nanotechnology. № 4. V. 10. 2014. P. 223-236.

Pankratov E.L., Bulaeva E.A. Variation of redistribution of an infused dopant in a multilayer structure with variation of pressure of vapor of the dopant // The International Journal of Multiphysics. № 4. V. 8. 2014. P. 411-420.

Pankratov E.L., Pankratov E.L. On approach to increase integration rate of field-effect transistors by using inhomogeneity of heterostructure and optimization of technological process // Micro and Nanosystems. № 3. V. 6. 2014. P. 168-177.

Pankratov E.L., Bulaeva E.A. Optimization of manufacturing of drift hetero bipolar transistors to increase their compactness // Journal of coupled systems and multiscale dynamics. № 3. V. 2. 2014. P. 137-156.

Pankratov E.L., Bulaeva E.A. On approach to increase integration rate of field-effect heterotransistors with simplification of their construction // Journal of Computational Intelligence and Electronic Systems. № 3. V. 3. 2014. P. 228-235.

2013

Публикации в научных журналах

Pankratov E.L., Bulaeva E.A. Analytical approach to analysis nonlinear model of relaxation of mechanical stress in a heterostructure with porous epitaxial layer // Nanoscience and Nanotechnology Letters. № 3. V. 5. 2013. P. 418-426.

Pankratov E.L., Pankratov E.L. Application of native inhomogeneities to increase compactness of vertical field-effect transistors // Journal of Computational and Theoretical Nanoscience. № 4. V. 10. 2013. P. 888-893.

Pankratov E.L., Bulaeva E.L. Analytical approach to model distribution of dopant in an implanted-heterojunction rectifier with account mechanical stress // Physics Research International. V. 2013. 2013. P. ID 645620.

Pankratov E.L. Using serial radiation processing and microwave annealing decrease depth of p-n-junction in a semiconductor heterostructure // Applied Nanoscience. № 4. V. 3. 2013. P. 281-290.

Pankratov E.L., Bulaeva E.A. Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier // Applied Nanoscience. № 4. V. 3. 2013. P. 303-320.

Pankratov E.L., Bulaeva E.A. Using porous layers to decrease quantity of radiation defects, generated during ion implantation // Journal of Nanoengineering and Nanomanufacturing. № 1. V. 3. 2013. P. 19-33.

Pankratov E.L., Bulaeva E.A. Influence of radiation processing of material during infusion of dopant on charge carriers mobility in a diffusion-junction rectifiers // Journal of Advanced Physics. № 1. V. 2. 2013. P. 75-84.

Pankratov E.L., Bulaeva E.A. Analytical approach to model distributions of concentrations of charge carriers in a diffusive-junction rectifiers with optimized distributions of dopants // Journal of Advanced Physics. № 2. V. 2. 2013. P. 151-162.

Pankratov E.L., Pankratov E.L. Influence of drain of dopant on distribution of dopant in diffusion-heterojunction rectifiers // Journal of Advanced Physics. № 2. V. 2. 2013. P. 147-150.

Pankratov E.L., Pankratov E.L. Doping of materials during manufacture p-n-junctions and bipolar transistors. Analytical approaches to model technological approaches and ways of optimization of distributions of dopants // Reviews in Theoretical Science. № 1. V. 1. 2013. P. 58-82.

Pankratov E.L., Pankratov E.L. Optimal Criteria to Estimate Temporal Characteristics of Diffusion Process in a Media with Inhomogenous and Nonstationary Parameters. Analysis of Influence of Variation of Diffusion Coefficient on Values of Time Characteristics // Reviews in Theoretical Science. № 3. V. 1. 2013. P. 305.

Pankratov E.L. Diagnostics of possibility to increase prediction of dynamic of charge carriers in a p-n-junction with optimized distributions of dopants // Universal Journal of Applied Mathematics. № 1. V. 1. 2013. P. 17-31.

Pankratov E.L., Pankratov E.L. An approach to decrease dimensions of field-effect transistors // Universal Journal of Materials Science. № 1. V. 1. 2013. P. 6-11.

Pankratov E.L. Manufacturing of planar field-effect heterotransistors with decreasing their dimensions and simplification of their constructions // Universal Journal of Materials Science. № 2. V. 1. 2013. P. 46-51.

Pankratov E.L., Bulaeva E.A. About controlling of regimes of heating during growth a heterostructures from gas phase // Universal Journal of Materials Science. № 4. V. 1. 2013. P. 180-200.

Pankratov E.L., Bulaeva E.A. Optimization of doping of heterostructure during manufacturing of p-i-n-diodes // Nanoscience and Nanoengineering. № 1. V. 1. 2013. P. 57-70.

Pankratov E.L., Bulaeva E.A. Influence of adsorption of dopant on distribution of the dopant in a p-n-junction // Universal Journal of Applied Science. № 1. V. 1. 2013. P. 18-26.

Pankratov E.L., Pankratov E.L. About manufacturing more compact bipolar heterotransistors // Nanoscience and Nanoengineering. № 2. V. 1. 2013. P. 98-115.

Pankratov E.L., Bulaeva E.A. Influence of adsorption of dopant on distribution of the dopant in a p-n-junction // Universal Journal of Applied Science. № 1. V. 1. 2013. P. 18-26.

Pankratov E.L., Bulaeva E.A. About manufacturing more compact bipolar heterotransistors // Nanoscience and Nanoengineering. № 2. V. 1. 2013. P. 98-115.

Pankratov E.L., Pankratov E.L. Influence of overlayer and optimization of annealing time on distribution of dopant in an implanted- heterojunction rectifier // Universal Journal of Materials Science. № 3. V. 1. 2013. P. 159-169.

Pankratov E.L., Bulaeva E.A. Decreasing energy costs in epitaxial growth from gas phase system by optimization of pressure // Advances in Energy and Power. № 2. V. 1. 2013. P. 45-50.

Pankratov E.L., Bulaeva E.A. An approach for analytical modeling of modification of porosity of materials heterostructure under influence mechanical stress // Journal od advanced physics. № 4. V. 2. 2013. P. 285-291.

Pankratov E.L. An approach to manufacture of bipolar transistors in thin film structures. On the method of optimization // International Journal of Micro-Nano Scale Transport. № 1. V. 4. 2013. P. 17-31.

Pankratov E.L., Bulaeva E.A. Increasing of compactness of p-i-n-diodes by using inhomogeneity of a multilayer structure // Journal of Computational Intelligence and Electronic Systems. № 2. V. 2. 2013. P. 148-155.

Pankratov E.L., Bulaeva E.A. An approach to model electrical properties in a diffusion-junction and implanted-junction rectifiers in heterostructure with porous layers // Journal of Computational Intelligence and Electronic Systems. № 2. V. 2. 2013. P. 161-183.

2012

Публикации в научных журналах

Pankratov E.L., Mynbaeva M.G., Mokhov E.N., Mynbaev K.D. Analysis of erbium and vanadium diffusion in porous silicon carbide // Advances in Condensed Matter Physics. V. 2012. 2012. P. ID 439617.

Pankratov E.L., Bulaeva E.A. Decreasing of quantity of radiation defects in an im-planted-junction rectifiers by using overlayers // International Journal of Micro-Nano Scale Transport. № 3. V. 3. 2012. P. 119-130.

Pankratov E.L., Bulaeva E.A. Application of native inhomogeneities to increase compactness of vertical field-effect transistors // Journal of Nanoengineering and Nanomanufacturing. № 3. V. 2. 2012. P. 275-280.

Pankratov E.L. Decreasing of dimensions of planar field-effect transistors by using native inhomogeneities // Journal of Computational and Theoretical Nanoscience. № 12. V. 9. 2012. P. 2166-2171.

Pankratov E.L. Influence of mechanical stress in semiconductor heterostructure on density of p-n-junctions // Applied Nanoscience. № 1. V. 2. 2012. P. 71-89.

Pankratov E.L., Bulaeva E.A. Decreasing of quantity of radiation defects in an implanted-junction rectifier in a semiconductor heterostructure // Journal of Nanoengineering and Nanomanufacturing. № 2. V. 1. 2012. P. 219-227.

Pankratov E.L. Decreasing of depth of p-n-junction in a semiconductor heterostructure by serial radiation processing and microwave annealing // Journal of Computational and Theoretical Nanoscience. № 1. V. 9. 2012. P. 41-49.

2011

Публикации в научных журналах

Pankratov E.L. Using native inhomogeneity of heterostructure to decrease dimensions of planar field-effect transistors // International Journal of Micro-Nano Scale Transport. № 2-3. V. 2. 2011. P. 117-127.

Pankratov E.L., Bulaeva E.A. Decreasing of quantity of radiation defects in an implanted-junction rectifier in a semiconductor heterostructure // International Journal of Micro-Nano Scale Transport. № 1. V. 2. 2011. P. 85-98.

Pankratov E.L. Optimization of annealing to decrease quantity of radiation defects in a bipolar transistor // Applied Nanoscience. № 3. V. 1. 2011. P. 123 -131.

Панкратов Е.Л. Влияние механических напряжений в полупроводниковой гетероструктуре на плотность p-n-переходов // Журнал радиоэлектроники (электронный журнал). № 6. 2011. С. 1-36.

Pankratov E.L. Application of porous layers and optimization of annealing of dopant and radiation defects to increase sharpness of p-n-junctions in a bipolar heterotransistors // Journal of Nanoelectronics and Optoelectronics. № 2. V. 6. 2011. P. 188-206.

Панкратов Е.Л., Мынбаева М.Д., Мохов Е.Н., Мынбаев К.Д. Диффузия в пористом карбиде кремния // Физика твёрдого тела. № 5. Т. 53. 2011. С. 885 -891.

Pankratov E.L. Application of radiation processing of materials to increase sharpness of p-n-junction in a semiconductor heterostructure // Journal of computational and theoretical nanoscience. № 9. V. 8. 2011. P. 1888-1894.

Pankratov E.L. Increasing of homogeneity of dopant distribution in a p-n-junction by using an overlayers // Journal of computational and theoretical nanoscience. № 2. V. 8. 2011. P. 207-209.

©  Нижегородский государственный университет им. Н.И. Лобачевского